Help is required related to electrical exam preparation? Academictask has 2000 plus electronics and electrical engineering (MCQs) and answers with detailed explanations. The electrical question category contains Important Engineering MCQs for NTS, FPSC, KPPSC, ETEA, and other tests preparation and the entrance test. MCQs of electrical engineering covers the topic like Analog and Digital Communications, Control Systems, Power Electronics, Electric Circuits, Electric machines, Electrical measurement & units, Utilization of Electrical Energy, Basic Electrical Engineering, Electrical Installation, Power Systems, Testing & maintenance of electrical equipment’s – and much more. 

81. A power MOSFET has three terminals called___________?

A. Collector, emitter and gate
B. Drain, source and gate
C. Drain, source and base
D. Collector, emitter and base

82. The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will___________?

A. Turn on
B. Not turn on
C. Turn on if inductance is removed
D. Turn on if pulse frequency us increased to two times

83. Spread time is defined as the interval during which_____________?

A. anode voltage drops from 10 % of its initial value to zero
B. anode current rises from 90 % to its final value
C. both (A) and (B)
D. anode current rises from 10 % to 90 % of its final value

84. Maximum power loss occurs during_________________?

A. delay time
B. rise time
C. spread time
D. all

85. The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is___________?

A. 130 μs
B. 135 μs
C. 140 μs
D. 145 μs

86. The typical time of rising time lies between______________?

A. 10 – 20 µs
B. 40 – 60 µs
C. 1 – 4 µs
D. 90 – 100 µs

87. SITH is also known as___________?

A. Filled controlled diode
B. Filled controlled rectifier
C. Silicon controlled rectifier
D. None of these

88. Delay time is defined by the interval when_______________?

A. gate current increases from 90 % to 100 % of its final value
B. anode current reaches 10 % from forward leakage current
C. anode voltage drops from 100 % to 90 % of its actual value
D. all of these

89. A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?

A. IGBT
B. FCT
C. MCT
D. GTO

90. Rise time is defined by the interval when____________?

A. gate current rises from 90 % to 100 % of it final value
B. anode voltage drops from 90 % to 10 % of its initial value
C. anode current rises 10 % to 90 % of its final value
D. both B and C