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71. IGBT combines the advantages of_____________?
A. BJTs and SITs
B. BJTs and MOSFETs
C. SITs and MOSFETs
D. None of these
72. What happen due to high di / dt____________?
A. Breakdown of junction
B. Local hot spot
C. Insulation failure
D. None of these
73. Thermal voltage VT can be given by____________?
A. Kq/T
B. KT/q
C. qT/K
D. (K2/q)(T + 1/T – 1)
74. What may happen high dV / dt____________?
A. Unwanted turn ON
B. Breakdown of J2 junction
C. Both A and B
D. Anyone of these
75. Why resistor is used in Snubber circuit_________________ ?
A. To minimize the loss
B. To minimize the charging current
C. To minimize the discharging current
D. All of these
76. Snubber circuit is used with SCR_________________?
A. in series
B. in parallel
C. either series or parallel
D. anti parallel
77. Which one is most suitable power device for high frequency (>100 KHz) switching application?
A. BJT
B. Power MOSFET
C. Schottky diode
D. Microwave transistor
78. What is used to protect a thyristor from high di / dt conditions__________?
A. Fuse.
B. Snubber circuit
C. Inductor
D. Voltage clamping device
79. COOLMOS device can be used in application up to power range of___________?
A. 1 KVA
B. 2 KVA
C. 500 VA
D. 100 KVA
80. Which of the following is used in SCR to protect from high dV / dt__________________?
A. Snubber circuit
B. Fuse
C. Equalizing circuit
D. Circuit breaker