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91. During gate recovery time_____________?
A. charge carriers of J2 junction recombined
B. charge carriers of J2 junction is swept out
C. charge carrier of J1 junction removed
D. charge carriers of J3 junction is removed
92. Power transistor are type of___________?
A. B.JTs
B. MOSFETs
C. IGBTs
D. All of above
93. Typical range of thyristor turn OFF time is______________?
A. 3 – 10 µs
B. 3 – 50 µs
C. 3 – 100 µs
D. 3 – 500 µs
94. Which of following is normally ON device?
A. SIT
B. BJT
C. TRIAC
D. IGBT
95. Which statement is true?
A. Reverse recovery time ( trr ) > gate recovery time (tgr)
B. Device turn OFF time ( tq ) > reverse recover time (trr)
C. Circuit turn OFF time > device turn OFF time ( tq )
D. All of these
96. Which of the following is not a power transistor?
A. IGBTs
B. COOLMOS
C. TRIAC
D. SITS
97. A GTO can be turned on by applying___________?
A. Positive gate signal
B. Positive drain signal
C. Positive source signal
D. None of these
98. During which time maximum conduction spreading takes place in the thyristor during turn ON?
A. Delay time
B. Spread time
C. Rise time
D. Same for every case
99. Which of the following is true about SIT?
A. SIT is a high power, high-frequency device
B. SIT is a high power, low-frequency device
C. SIT is a high power, high voltage device
D. SIT is a low power, high frequency device
100. During reverse recovery time__________________?
A. charge carrier of junction J2 recombined
B. charge carrier of junction J1 is swept out
C. charge carrier of junction J3 is swept out
D. both B and C