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91. During gate recovery time_____________?

A. charge carriers of J2 junction recombined
B. charge carriers of J2 junction is swept out
C. charge carrier of J1 junction removed
D. charge carriers of J3 junction is removed

92. Power transistor are type of___________?

A. B.JTs
B. MOSFETs
C. IGBTs
D. All of above

93. Typical range of thyristor turn OFF time is______________?

A. 3 – 10 µs
B. 3 – 50 µs
C. 3 – 100 µs
D. 3 – 500 µs

94. Which of following is normally ON device?

A. SIT
B. BJT
C. TRIAC
D. IGBT

95. Which statement is true?

A. Reverse recovery time ( trr ) > gate recovery time (tgr)
B. Device turn OFF time ( tq ) > reverse recover time (trr)
C. Circuit turn OFF time > device turn OFF time ( tq )
D. All of these

96. Which of the following is not a power transistor?

A. IGBTs
B. COOLMOS
C. TRIAC
D. SITS

97. A GTO can be turned on by applying___________?

A. Positive gate signal
B. Positive drain signal
C. Positive source signal
D. None of these

98. During which time maximum conduction spreading takes place in the thyristor during turn ON?

A. Delay time
B. Spread time
C. Rise time
D. Same for every case

99. Which of the following is true about SIT?

A. SIT is a high power, high-frequency device
B. SIT is a high power, low-frequency device
C. SIT is a high power, high voltage device
D. SIT is a low power, high frequency device

100. During reverse recovery time__________________?

A. charge carrier of junction J2 recombined
B. charge carrier of junction J1 is swept out
C. charge carrier of junction J3 is swept out
D. both B and C